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HCTS138MS
Data Sheet September 12, 2005 FN2462.3
Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer
The Intersil HCTS138MS is a Radiation Hardened 3-to-8 line Decoder/Demultiplexer. The outputs are active in the low state. Two active low and one active high enables (E1, E2, E3) are provided. If the device is enabled, the binary inputs (A0, A1, A2) determine which one of the eight normally high outputs will go to a low logic level. The HCTS138MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS138MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Features
* 3 Micron Radiation Hardened SOS CMOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) * Latch-Up Free Under Any Conditions * Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 TOP VIEW
A0 A1 A2 E1 E2 E3 Y7 GND 1 2 3 4 5 6 7 8 16 VCC 15 Y0 14 Y1 13 Y2 12 Y3 11 Y4 10 Y5 9 Y6
* LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min * Input Current Levels Ii 5A at VOL, VOH
Ordering Information
PART NUMBER HCTS138DMSR HCTS138KMSR HCTS138HMSR TEMP RANGE -55oC to +125oC -55oC to +125oC +25oC SCREENING LEVEL PACKAGE
Intersil Class S 16 Lead SBDIP Equivalent Intersil Class S 16 Lead Ceramic Equivalent Flatpack Die Die
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 TOP VIEW
A0 A1 A2 E1 E2 E3 Y7 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 1995, 1999, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
HCTS138MS Functional Diagram
1 A0 15 Y0 14 2 A1 13 Y2 3 A2 11 Y4 4 E1 5 E2 6 E3 10 Y5 9 Y6 7 Y7 12 Y3 Y1
TRUTH TABLE INPUTS ENABLE E3 X L X H H H H H H H H E2 X X H L L L L L L L L E1 H X X L L L L L L L L A2 X X X L L L L H H H H A1 X X X L L H H L L H H A0 X X X L H L H L H L H Y0 H H H L H H H H H H H Y1 H H H H L H H H H H H Y2 H H H H H L H H H H H OUTPUTS Y3 H H H H H H L H H H H Y4 H H H H H H H L H H H Y5 H H H H H H H H L H H Y6 H H H H H H H H H L H Y7 H H H H H H H H H H L
H = High Level, L = Low Level, X = Don't Care
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FN2462.3 September 12, 2005
Specifications HCTS138MS
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . 10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . 25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . .+265oC Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package . . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . .0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . . 500ns Max Operating Temperature Range (TA) . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGRO UPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50A, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50A, VIL = 0.8V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 7.2 6.0 -7.2 -6.0 MAX 40 750 0.1 UNITS A A mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
-
V
1 2, 3
0.5 5.0 -
A A -
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, (Note 2)
7, 8A, 8B
1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
3
FN2462.3 September 12, 2005
Specifications HCTS138MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGRO UPS 9 10, 11 TPHL VCC = 4.5V 9 10, 11 Enable to Output TPLH VCC = 4.5V 9 10, 11 TPHL VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 2 2 2 2 MAX 25 30 28 39 26 31 26 34 UNITS ns ns ns ns ns ns ns ns
PARAMETER Address to Output
SYMBOL TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V 1 1 NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 89 102 10 10 15 22 UNITS pF pF pF pF ns ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V TEMPERATURE +25oC +25oC +25oC MIN 6.0 MAX 0.75 UNITS mA mA
Output Current (Source)
IOH
-6.0
-
mA
4
FN2462.3 September 12, 2005
Specifications HCTS138MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS PARAMETER Output Voltage Low SYMBOL VOL (NOTES 1, 2) CONDITIONS VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V at 200K RAD, IOL = 50A VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V at 200K RAD, IOH = -50A VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, (Note 3) VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN MAX 0.1 UNITS V
Output Voltage High
VOH
VCC -0.1 -
-
V
Input Leakage Current Noise Immunity Functional Test Address to Output
IIN FN
5 -
A -
TPLH TPHL
2 2 2 2
30 39 31 34
ns ns ns ns
Enable to Output
TPLH TPHL
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) PARAMETER ICC IOL/IOH GROUP B SUBGROUP 5 5 DELTA LIMIT 12A -15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
5
FN2462.3 September 12, 2005
Specifications HCTS138MS
TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
NOTE: 1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1) 7, 9 - 15 1 - 6, 8 16
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 7, 9 - 15 8 1 - 6, 16 -
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in 2. Each pin except VCC and GND will have a resistor of 680 5% for dynamic burn-in 4, 5, 8 7, 9 - 15 3, 6, 16 2 1
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 7, 9 - 15 GROUND 8 VCC = 5V 0.5V 1 - 6, 16
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
6
FN2462.3 September 12, 2005
HCTS138MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
7
FN2462.3 September 12, 2005
HCTS138MS AC Timing Diagrams
VIH VS VIL TPLH TPHL VOH VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT INPUT
VOH
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCTS 4.50 3.00 1.30 0 0 UNITS V V V V V
AC Load Circuit
DUT TEST POINT CL RL
CL = 50pF RL = 500
8
FN2462.3 September 12, 2005
HCTS138MS Die Characteristics
DIE DIMENSIONS: 85 x 101 mils METALLIZATION: Type: SiAl Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 x 4 mils
Metallization Mask Layout
HCTS138MS
A1 (2) A0 (1) VCC (16) Y0 (15)
A2 (3)
(14) Y1
NC NC
(13) Y2 E1 (4)
E2 (5)
(12) Y3
E3 (6) (11) Y4 NC
NC
(7) Y7
(8) GND
(9) Y6
(10) Y5
NOTE:
The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS138 is TA14461A.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 9
FN2462.3 September 12, 2005


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